| PART |
Description |
Maker |
| TGA2583-15 |
2.7 3.7GHz 10W GaN Power Amplifier
|
TriQuint Semiconductor
|
| 1N2981D 1N2987C 1N2973D 1N2987D 1N2989C 1N2980D 1N |
Diode Zener Single 17V 5% 10W 2-Pin DO-4
Diode Zener Single 25V 5% 10W 2-Pin DO-4
Diode Zener Single 9.1V 5% 10W 2-Pin DO-4
Diode Zener Single 30V 5% 10W 2-Pin DO-4
Diode Zener Single 16V 5% 10W 2-Pin DO-4
Diode Zener Single 7.5V 5% 10W 2-Pin DO-4
Diode Zener Single 24V 5% 10W 2-Pin DO-4
Diode Zener Single 175V 20% 10W 2-Pin DO-4
Diode Zener Single 50V 5% 10W 2-Pin DO-4
Diode Zener Single 43V 5% 10W 2-Pin DO-4
Diode Zener Single 56V 5% 10W 2-Pin DO-4
Diode Zener Single 13V 5% 10W 2-Pin DO-4
Diode Zener Single 8.2V 5% 10W 2-Pin DO-4
Diode Zener Single 15V 5% 10W 2-Pin DO-4
Diode Zener Single 27V 5% 10W 2-Pin DO-4
Diode Zener Single 18V 5% 10W 2-Pin DO-4
Diode Zener Single 105V 5% 10W 2-Pin DO-4
Diode Zener Single 52V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 10% 10W 2-Pin DO-4
Diode Zener Single 36V 5% 10W 2-Pin DO-4
Diode Zener Single 51V 5% 10W 2-Pin DO-4
Diode Zener Single 47V 5% 10W 2-Pin DO-4
|
New Jersey Semiconductor
|
| SY58011UMG SY58011UMITR SY58011UMI SY58011U SY5801 |
7GHZ, 1:2 CML FANOUT BUFFER/TRANSLATOR WITH INTERNAL I/O TERMINATION
|
MICREL[Micrel Semiconductor]
|
| MGFS45V2527 S452527 |
2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
|
Mitsubishi
|
| RFPA1702PCBA-410 RFPA1702S2 RFPA1702SB RFPA1702SQ |
17.7GHz TO 19.7GHz HIGH LINEARITY POWER AMPLIFIER
|
RF Micro Devices
|
| MGFC40V7785A |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7785B |
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7785B C407785B |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Semiconductor
|
